"SiC Power Cycling & Bipolar degradation"

Silicon carbide (SiC) power products may experience voltage degradation which stem from the stacking faults (SFs) growth, commonly known as bipolar degradation (BD). To properly evaluate the BD impact on electric performance of devices it is important to distinct it from other stress-related degradation e.g., power metal or interconnection. This aspect has not yet been addressed, although the bipolar degradation mechanism is well understood.

We want to discuss in this seminar a methodology by modifying the power cycling test (PC_sec) to PC_msec to systematically investigate the effect of bipolar degradation while controlling the impact of thermal degradation and the role of degradation on actual devices.

Contributions: