weitere Veranstaltungen, Halbleiter-Kolloquium
Datum: 18/07/2022
Ort: Online
Interner Bereich
für Cluster-Akteure
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Die Teilnahme ist kostenfrei und offen für alle Interessierten.
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Beginn: 17:15 Uhr
Am MS-TEAMS Meeting teilnehmen
Rechtliche Hinweise
Building on extensive experimental work and data, the EU-funded MUNDFAB project is developing the requisite modelling and simulation tools that will foster innovation via virtual fabrication of the next generation of nanoscale electronic devices. In this talk, we will give an overview of the ongoing MUNDFAB project and challenges associated with TCAD simulations of nanoscale devices and corresponding processes. As two examples, we will talk about simulations of heated implantation and a TCAD workflow for the simulation of a Vertical Gate-All-Around Nanowire Field-Effect-Transistor (GAA-NW-FET).
In this colloquium the speaker will present the new features implemented in the Multi Structure Kinetic Process Simulator open source code (MulSKIPS web page https://github.com/MulSKIPS/MulSKIPS) within the framework of the MUNDFAB project (coordinated by P. Pichler). The original version, developed to predict PVD growth processes of 3C-SiC with an atomic resolution, has been extended to simulate different processes of interest for nanoelectronics: SiGe CVD growth, Laser Annealing and silicide formation. The key characteristics of MulSKIPS (a flexible simulation scheme for material kinetics involving different ideal and defective atomic configurations) have been maintained in its MUNDFAB version, revealing the code potential for real applications.
Consiglio Nazionale delle Ricerche (CNR) – Istituto per la Microelettronica e Microsistemi (The Institute for Microelectronics and Microsystems)
The CNR Institute for Microelectronics and Microsystems has its Headquarters in Catania and is organized in 6 Sections located in Agrate Brianza, Bologna, Rome, Lecce and Catania.
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